2n2222adcsm doc 7168 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk dual high speed, medium power npn switching transistor in a hermetically sealed ceramic surface mount package for high reliability applications features ? dual silicon planar epitaxial npn transistors ? hermetic ceramic surface mount package ? cecc screening options ? space quality levels options ? high speed saturated switching applications: hermetically sealed dual surface mount version of the popular 2n2222a for high reliability / space applications requiring small size and low weight devices. per side v cbo collector ? base voltage v ceo collector ? emitter voltage (i b = 0) v ebo emitter ? base voltage (i b = 0) i c collector current p d total device dissipation p d derate above 50c total device r ja thermal resistance junction to ambient r jc thermal resistance junction to case t stg, t j storage temperature,operating temp range 75v 40v 6v 600ma 350mw 2.0mw / c 130c/w 60c/w ?55 to 200c mechanical data dimensions in mm (inches) absolute maximum ratings per side (t c = 25c unless otherwise stated) lcc2 package underside view pad 1 ? collector 1 pad 2 ? base 1 pad 3 ? base 2 pad 4 ? collector 2 pad 5 ? emitter 2 pad 6 ? emitter 1 1 2 6 3 4 5 2.54 0.13 (0.10 0.005) 0.64 0.06 (0.025 0.003) 0.23 (0.009) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 2.29 0.20 (0.09 0.008) rad. a 1.27 0.13 (0.05 0.005) a = 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005)
2n2222adcsm doc 7168 issue 1 parameter test conditions min. typ. max. unit t d delay time t r rise time t s storage time t f fall time parameter test conditions min. typ. max. unit parameter test conditions min. typ. max. unit i c = 10ma i c = 10 a i e = 10 ai c = 0 i b = 0 v ce = 60v i e = 0 v cb = 60v t c = 125c i c = 0 v eb = 3v (off) v ce = 60v v eb = 3v (off) i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 150ma i b = 15ma i c = 500ma i c = 50ma i c = 0.1ma v ce = 10v i c = 1ma v ce = 10v i c = 10ma v ce = 10v i c = 10ma v ce = 10v i c = 150ma v ce = 10v i c = 150ma v ce = 1v i c = 500ma v ce = 10v electrical characteristics per side (t c = 25c unless otherwise stated) v ceo(sus)* collector ? emitter sustaining voltage v (br)cbo* collector ? base breakdown voltage v (br)ebo* emitter ? base breakdown voltage i cex* collector cut-off current (i c = 0) i cbo* collector ? base cut-off current i ebo* emitter cut-off current (i c = 0) i bl* base current v ce(sat)* collector ? emitter saturation voltage v be(sat)* base ? emitter saturation voltage h fe* dc current gain t a = ?55c 40 75 6 10 10 10 10 20 0.3 1 0.6 1.2 2 35 50 75 35 100 300 50 40 v v v na na a na na v v ? f t transition frequency c ob output capacitance c ib input capacitance h fe small signal current gain i c = 20ma v ce = 20v f = 100mhz v cb = 10v i e = 0 f = 1.0mhz v be = 0.5v i c = 0 f = 1.0mhz i c = 1ma v ce = 10v f = 1khz i c = 10ma v ce = 10v f = 1khz 300 8 30 50 300 75 375 mhz pf pf 10 25 225 60 ns ns ns ns v cc = 30v v be = 0.5v (off) i c1 = 150ma i b1 = 15ma v cc = 30v i c = 150ma i b1 = i b2 = 15ma f t is defined as the frequency at which h fe extrapolates to unity. * pulse test t p = 300 s , 2% dynamic characteristics per side (t c = 25c unless otherwise stated) switching characteristics per side (resistive load) (t c = 25c unless otherwise stated) semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk
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